Spatially coherent vertical emission is demonstrated in an electrically pumped InGaN/GaN MQW laser with 4th order surface gratings defined by Focused Ion Beam etching, with vertical output power 6 times above scattering background levels.
© 2005 Optical Society of America
(050.0050) Diffraction and gratings : Diffraction and gratings
(050.2770) Diffraction and gratings : Gratings
(250.0250) Optoelectronics : Optoelectronics
(250.7270) Optoelectronics : Vertical emitting lasers
D. Cortaberria Sanz, J. M. Rorison, and S. Yu, "InGaN/GaN MQW Laser Diodes with 4th Order FIB-etched Gratings," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JTuC82.
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