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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Quantum Dot Materials for Optoelectronics (CFE)

Design, Fabrication and Operating Characteristics of Broadband Quantum Dot Superluminescent Diodes

Sumon K. Ray, Ryan R. Alexander, Kenneth Kennedy, Kristian M. Groom, Hui Y. Liu, Mark Hopkinson, and Richard A. Hogg

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We discuss methods to broaden the emission spectra of quantum dot superluminescent diodes. Such devices exhibit 85 nm wide; almost flat emission spectrum while operated CW at room temperature with output powers of 2.5 mW.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.1150) Optical devices : All-optical devices
(230.3670) Optical devices : Light-emitting diodes

S. K. Ray, R. R. Alexander, K. Kennedy, K. M. Groom, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Design, Fabrication and Operating Characteristics of Broadband Quantum Dot Superluminescent Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CFE2.

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