2.35mm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.
© 2006 Optical Society of America
L. Shterengas, G. Belenky, G. Kim, A. Gourevitch, D. Donetsky, D. Westerfeld, and R. Martinell, "Effect of Compressive Strain on Differential Gain of GaSb-based Type-I QW Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CMBB5.
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