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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
New Semiconductor Laser Materials (CMBB)

Effect of Compressive Strain on Differential Gain of GaSb-based Type-I QW Lasers

Leon Shterengas, Gregory Belenky, George Kim, Alex Gourevitch, Dmitry Donetsky, David Westerfeld, and Ramon Martinell

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Abstract

2.35mm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

Citation
L. Shterengas, G. Belenky, G. Kim, A. Gourevitch, D. Donetsky, D. Westerfeld, and R. Martinell, "Effect of Compressive Strain on Differential Gain of GaSb-based Type-I QW Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CMBB5.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CMBB5


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