InGaAsN/GaAsSb 'W' type-II strain compensated quantum well lasers on GaAs substrates are grown by MOCVD. Preliminary 3-stage active region lasers exhibit emission that is blue-shifted from the PL, due to charge separation and higher-energy transitions.
© 2006 Optical Society of America
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2020) Lasers and laser optics : Diode lasers
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
L. J. Mawst, J. Y. Yeh, D. P. Xu, J. H. Park, J. Huang, A. Khandekar, T. F. Kuech, N. Tansu, I. Vurgaftman, and J. R. Meyer, "InGaAsN/GaAsSb/GaAs(P) Type-II "W" Quantum Well Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CMBB6.
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