Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm.
© 2006 Optical Society of America
Q. Zhang, Y. Wang, H. Sun, and J. Wu, "ZnO Nanowire-Based Schottky-Barrier-Type UV Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThB6.
References are not available for this paper.