OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO > 2006 > CThB > Page CThB6 © 2006 OSA

Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Low Dimensional Semiconductors (CThB)

ZnO Nanowire-Based Schottky-Barrier-Type UV Light-Emitting Diodes

Qifeng Zhang, Yanxin Wang, Hui Sun, and Jinlei Wu

View Full Text Article

Acrobat PDF (78 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm.

© 2006 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.2540) Materials : Fluorescent and luminescent materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
Q. Zhang, Y. Wang, H. Sun, and J. Wu, "ZnO Nanowire-Based Schottky-Barrier-Type UV Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThB6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CThB6


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited