An integrated Ge-on-SOI photo-detector based on secondary photo-conductivity is proposed and demonstrated. A 1mW beam at 1.55µm creates charge separation in the Ge thereby changing the resistivity of the underlying Silicon by ~3%.
© 2006 Optical Society of America
S. Sahni, E. Yablonovitch, J. Liu, and Y. Xie, "Novel CMOS Compatible Cavity Enhanced Ge/SOI Photo-Detector Based on Secondary Photo-Conducivity," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThD3.
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