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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Receivers and Detectors (CThD)

Novel CMOS Compatible Cavity Enhanced Ge/SOI Photo-Detector Based on Secondary Photo-Conducivity

Subal Sahni, Eli Yablonovitch, J Liu, and Ya-hong Xie

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Abstract

An integrated Ge-on-SOI photo-detector based on secondary photo-conductivity is proposed and demonstrated. A 1mW beam at 1.55µm creates charge separation in the Ge thereby changing the resistivity of the underlying Silicon by ~3%.

© 2006 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.5160) Detectors : Photodetectors
(130.0130) Integrated optics : Integrated optics
(130.3120) Integrated optics : Integrated optics devices

Citation
S. Sahni, E. Yablonovitch, J. Liu, and Y. Xie, "Novel CMOS Compatible Cavity Enhanced Ge/SOI Photo-Detector Based on Secondary Photo-Conducivity," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThD3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CThD3


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