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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Quantum Dot II (CThGG)

Improved 1.3 µm In(Ga)As Quantum Dot Lasers by Engineering the GaAs Spacer Layers

Craig Walker, Ian Sandall, Peter Smowton, Tom Badcock, David Mowbray, Huiyun Liu, and Mark Hopkinson

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Abstract

Greatly improved threshold current and modal gain performance of 1.3 µm quantum dot lasers is achieved by engineering the GaAs spacer layers between dot layers to improve dot homogeneity and enable closer dot layers.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics

Citation
C. Walker, I. Sandall, P. Smowton, T. Badcock, D. Mowbray, H. Liu, and M. Hopkinson, "Improved 1.3 µm In(Ga)As Quantum Dot Lasers by Engineering the GaAs Spacer Layers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThGG6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CThGG6


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