Greatly improved threshold current and modal gain performance of 1.3 µm quantum dot lasers is achieved by engineering the GaAs spacer layers between dot layers to improve dot homogeneity and enable closer dot layers.
© 2006 Optical Society of America
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics
C. Walker, I. Sandall, P. Smowton, T. Badcock, D. Mowbray, H. Liu, and M. Hopkinson, "Improved 1.3 µm In(Ga)As Quantum Dot Lasers by Engineering the GaAs Spacer Layers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThGG6.
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