Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CThX4

Microwave Frequency Characterization of Undoped and p-Doped Quantum Dot Lasers Emitting at 1.24 μm

Not Accessible

Your library or personal account may give you access

Abstract

Directly-modulated quantum dot lasers showed that the highest relaxation frequency decreases monotonically with the p-doping level from 5.3 GHz (undoped wafer), to 4.6 GHz (20 holes/dot), 3.8 GHz (30 holes/dot) and 3.6 GHz (40 holes/dot).

© 2006 Optical Society of America

PDF Article
More Like This
The effect of p – doping in In(Ga)As Quantum Dot Lasers

I. C. Sandall, C. L. Walker, P. M. Smowton, T. Badcock, D. J. Mowbray, H. Y. Liu, and M. Hopkinson
CThX5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

10GHz Tunable Slow Light in 1.3 μm Quantum Dot Vertical-Cavity Surface-Emitting Lasers Amplifier

C. T. Lin, P. C. Peng, H. C. Kuo, G Lin, W. K. Tsai, H. P. Yang, K. F. Lin, J. Y. Chi, B. S. Chiou, S. Chi, and S. C. Wang
OME3 Optical Amplifiers and Their Applications (OAA) 2006

Low-driving-current 10-Gb/s direct modulation of temperature-stable 1.3-µm p-doped quantum-dot lasers between 20ºC and 90ºC

M. Ishida, N. Hatori, K. Otsubo, T. Yamamoto, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa
CThGG5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.