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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Quantum Dot I (CThX)

The Effect of P-Doping in In(Ga)As Quantum Dot Lasers

Ian C. Sandall, Craig L. Walker, Peter M. Smowton, Tom Badcock, David J. Mowbray, Hui Y. Liu, and Mark Hopkinson

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Abstract

We have measured modal gain and absorption data for doped and undoped quantum dot devices. We show that p doping results in an increase in the amount of gain available at a fixed current.

© 2006 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.5990) Integrated optics : Semiconductors
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers

Citation
I. C. Sandall, C. L. Walker, P. M. Smowton, T. Badcock, D. J. Mowbray, H. Y. Liu, and M. Hopkinson, "The Effect of P-Doping in In(Ga)As Quantum Dot Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThX5.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CThX5


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