OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO > 2006 > CThX > Page CThX6 © 2006 OSA

Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Quantum Dot I (CThX)

High Characteristic Temperature of P-Doped InAs Quantum Dots-in-a-Well Lasers on InP Substrate

Yan Li, Thomas J. Rotter, Yongchun Xin, Andreas Stintz, Anthony Martinez, Kevin J. Malloy, and Luke F. Lester

View Full Text Article

Acrobat PDF (379 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

The p-doped quantum dot-in-well (DWELL) lasers emitting at 1.44 mm on InP (001) substrates are demonstrated. The characteristic temperature is 210K in the room temperature range.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.0160) Materials : Materials
(160.3380) Materials : Laser materials

Citation
Y. Li, T. J. Rotter, Y. Xin, A. Stintz, A. Martinez, K. J. Malloy, and L. F. Lester, "High Characteristic Temperature of P-Doped InAs Quantum Dots-in-a-Well Lasers on InP Substrate," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CThX6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CThX6


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited