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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Organic Light Emitters and Solid-State Lighting (CTuDD)

99% External Quantum Efficiency from a GaAs Heterostructure at 100 K

Babak Imangholi, Chengao Wang, Michael P. Hasselbeck, Mansoor Sheik-Bahae, Richard I. Epstein, and Sarah Kurtz

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Abstract

Record external quantum efficiency (99%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K. This was measured using a differential luminescence thermometry technique with temperature resolution ~ 30µK.

© 2006 Optical Society of America

OCIS Codes
(300.0300) Spectroscopy : Spectroscopy
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(300.6470) Spectroscopy : Spectroscopy, semiconductors

Citation
B. Imangholi, C. Wang, M. P. Hasselbeck, M. Sheik-Bahae, R. I. Epstein, and S. Kurtz, "99% External Quantum Efficiency from a GaAs Heterostructure at 100 K," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CTuDD3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CTuDD3


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