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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuDD3

99% External Quantum Efficiency from a GaAs Heterostructure at 100 K

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Abstract

Record external quantum efficiency (99%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K. This was measured using a differential luminescence thermometry technique with temperature resolution~30 mK.

© 2006 Optical Society of America

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