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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Inorganic and Organic LEDS (CTuE)

Gallium Nitride-Organic Semiconductor Heterojunctions for Optoelectronic Devices

Yoon-Kyu Song, Hyunjin Kim, Tolga Atay, William R. Patterson, Arto V. Nurmikko, Maria Gherasimova, Kyung K. Kim, and Jung Han

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Abstract

We report on study of GaN/InGaN-organic semiconductor heterostructures where electronic transport in planar junction structures shows electron or/and hole injection across the interfaces resulting e.g. light emission from the nitride quantum wells.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(300.0300) Spectroscopy : Spectroscopy
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

Citation
Y. Song, H. Kim, T. Atay, W. R. Patterson, A. V. Nurmikko, M. Gherasimova, K. K. Kim, and J. Han, "Gallium Nitride-Organic Semiconductor Heterojunctions for Optoelectronic Devices," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CTuE1.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CTuE1


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