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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuF4

Terahertz Silicon Lasers

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Abstract

Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.

© 2006 Optical Society of America

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