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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Wide-Bandgap LEDs (CTuN)

Visible Electroluminescence from Size-Controlled Silicon Quantum Dots

Hea Jeong Cheong, Daihei Hippo, Atsushi Tanaka, Kouichi Usami, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda

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Abstract

We studied visible EL from size-controlled silicon quantum dots with diameter of 8nm±1nm fabricated by VHF plasma decomposition process. We observed EL from nc-Si quantum dots with applied voltage above 12V.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

Citation
H. J. Cheong, D. Hippo, A. Tanaka, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda, "Visible Electroluminescence from Size-Controlled Silicon Quantum Dots," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CTuN4.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CTuN4


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