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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Silicon Photonic Devices I (CTuU)

Ge on Si by Novel Heteroepitaxy for High Efficiency Near Infrared Photodetection

Ali K. Okyay, Ammar M. Nayfeh, Takao Yonehara, Ann Marshall, Paul C. McIntyre, and Krishna C. Saraswat

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Abstract

We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85 A/W at 1.55 µm and 2 V reverse bias, and exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%.

© 2006 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.3060) Detectors : Infrared
(040.5160) Detectors : Photodetectors

Citation
A. K. Okyay, A. M. Nayfeh, T. Yonehara, A. Marshall, P. C. McIntyre, and K. C. Saraswat, "Ge on Si by Novel Heteroepitaxy for High Efficiency Near Infrared Photodetection," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper CTuU5.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-CTuU5


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