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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuX1

Polarization Field Engineering with Type-II InGaN-GaNAs Quantum Well for Improved Nitride Gain Media at 420-550 nm

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Abstract

Novel type-II InGaN-GaNAs quantum well is presented and analyzed as improved gain media for efficient light emitting diodes and laser diodes emitting at 420-nm up to 550-nm, with a large electron- hole wavefunction overlap (Γe_hh gt;65-70%).

© 2006 Optical Society of America

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