We report a measurement of the modification of the x-ray absorption spectrum near the L and K edges of Silicon after excitation with near IR pulses. The estimated temporal resolution is better than 20 fs.
© 2006 Optical Society of America
E. Seres and C. Spielmann, "Time-Resolved X-ray Absorption Spectroscopy at the Silicon L- and K-Edge with 20 fs Resolution," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JFB3.
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