Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10GHz were demonstrated.
© 2006 Optical Society of America
H. Murata, N. Kobayashi, Y. Okamura, T. Kosugi, and T. Enoki, "Optical Mixing in InP-Based High-Electron Mobility Transistors by Use of a Focused Laser Beam," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JThC62.
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