We demonstrate the operation of a novel quantum dot, optically gated, field-effect transistor as a photon detector. The device is shown to exhibit single-photon sensitivity, a linear response, and an internal quantum efficiency of ~73%.
© 2006 Optical Society of America
E. J. Gansen, M. A. Rowe, D. Rosenberg, M. Greene, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, and R. P. Mirin, "Single-Photon Detection Using a Semiconductor Quantum Dot, Optically Gated, Field-Effect Transistor," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JTuF4.
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