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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session II (JWB)

High-Power Al-Free Active Region (l = 852nm) DFB Laser Diodes For Atomic Clocks and Interferometry Applications

Vincent Ligeret, François-Julien Vermersch, Shailendra Bansropun, Michel Lecomte, Michel Calligaro, Olivier Parillaud, and Michel Krakowski

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Abstract

We have developed single frequency and single spatial mode laser structures with high optical power, using an aluminium free active region, which are to our knowledge the first demonstration for Cs pumping at 852nm.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3490) Lasers and laser optics : Lasers, distributed-feedback
(140.5960) Lasers and laser optics : Semiconductor lasers

Citation
V. Ligeret, F. Vermersch, S. Bansropun, M. Lecomte, M. Calligaro, O. Parillaud, and M. Krakowski, "High-Power Al-Free Active Region (l = 852nm) DFB Laser Diodes For Atomic Clocks and Interferometry Applications," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB5.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-JWB5


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