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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JWB73

Fabricated the Inclined-Undercut Structure in High Efficiency InGaN-based Light Emitting Diodes

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Abstract

The high efficiency InGaN-based light emitting diodes with an inclined-undercut mesa structures are fabricated through photoelectrochemical selective oxidation process at p-n interface and following crystallographic wet etching in molten KOH solution.

© 2006 Optical Society of America

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