Enhancement of light extraction in a GaInN light-emitting diode employing a conductive omnidirectional reflector consisting of GaN, an indium-tin oxide nanorod low-refractive-index layer, and an Ag layer is presented.
© 2006 Optical Society of America
J. K. Kim, J. -. Xi, H. Luo, E. F. Schubert, J. Cho, C. Sone, and Y. Park, "Enhancement of Light-Extraction in GaN Light-Emitting Diodes by Conductive Omni-Directional Reflectors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB75.
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