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Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session II (JWB)

Enhancement of Light-Extraction in GaN Light-Emitting Diodes by Conductive Omni-Directional Reflectors

Jong Kyu Kim, J.-Q. Xi, Hong Luo, E. Fred Schubert, Jaehee Cho, Cheolsoo Sone, and Yongjo Park

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Abstract

Enhancement of light extraction in a GaInN light-emitting diode employing a conductive omnidirectional reflector consisting of GaN, an indium-tin oxide nanorod low-refractive-index layer, and an Ag layer is presented.

© 2006 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

Citation
J. K. Kim, J. -. Xi, H. Luo, E. F. Schubert, J. Cho, C. Sone, and Y. Park, "Enhancement of Light-Extraction in GaN Light-Emitting Diodes by Conductive Omni-Directional Reflectors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB75.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-JWB75


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