The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface which using Ni nano-mask and laser etching methods were demonstrated and analyzed.
© 2006 Optical Society of America
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2180) Lasers and laser optics : Excimer lasers
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics
H. W. Huang, "Investigation of InGaN/GaN Light Emitting Diodes by Excimer Laser Etching," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB79.
References are not available for this paper.