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Optics InfoBase > Conference Papers > CLEO > 2006 > JWB > Page JWB79 © 2006 OSA

Conference Paper
Conference on Lasers and Electro-Optics
Long Beach, California United States
May 21, 2006
ISBN: 1-55752-813-6
Joint CLEO/QELS Poster Session II (JWB)

Investigation of InGaN/GaN Light Emitting Diodes by Excimer Laser Etching

Hung Wen. Huang

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Abstract

The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface which using Ni nano-mask and laser etching methods were demonstrated and analyzed.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2180) Lasers and laser optics : Excimer lasers
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics

Citation
H. W. Huang, "Investigation of InGaN/GaN Light Emitting Diodes by Excimer Laser Etching," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper JWB79.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2006-JWB79


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