We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.
© 2007 OSA
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, G. Blume, G. Weiser, W. Rühle, S. R. Johnson, J. Wang, and Y. -. Zhang, "Strong Lateral Confinment in Ga(AsSb)/GaAs/(AlGa)As Heterostructures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper CMN2.
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