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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 6, 2007
ISBN: 1557528349
Near-Infrared Semiconductor Materials (CMN)

Strong Lateral Confinment in Ga(AsSb)/GaAs/(AlGa)As Heterostructures

Swantje Horst, Sangam Chatterjee, Kristian Hantke, Peter J. Klar, Igor Nemeth, Wolfgang Stolz, Kerstin Volz, Christina Bückers, Angela Thränhardt, Stephan W. Koch, Gunnar Blume, Gerhard Weiser, Wolfgang Rühle, Shane R. Johnson, Jiangbo Wang, and Yong -Hang. Zhang

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Abstract

We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

© 2007 OSA

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(300.0300) Spectroscopy : Spectroscopy
(300.6500) Spectroscopy : Spectroscopy, time-resolved

Citation
S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, G. Blume, G. Weiser, W. Rühle, S. R. Johnson, J. Wang, and Y. -. Zhang, "Strong Lateral Confinment in Ga(AsSb)/GaAs/(AlGa)As Heterostructures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper CMN2.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2007-CMN2


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