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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 6, 2007
ISBN: 1557528349
Nanowires and Nanorods (CThGG)

Photoluminescence of GaInAsP/InP Single Quantum Wires with Lateral Widths down to 6 nm Fabricated by Dry Etching and Regrowth

Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Dhanorm Plumwongrot, Takeo Maruyama, and Shigehisa Arai

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Abstract

We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.

© 2007 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
(300.0300) Spectroscopy : Spectroscopy
(300.6470) Spectroscopy : Spectroscopy, semiconductors

Citation
H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama, and S. Arai, "Photoluminescence of GaInAsP/InP Single Quantum Wires with Lateral Widths down to 6 nm Fabricated by Dry Etching and Regrowth," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper CThGG3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2007-CThGG3


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