We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.
© 2007 OSA
H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama, and S. Arai, "Photoluminescence of GaInAsP/InP Single Quantum Wires with Lateral Widths down to 6 nm Fabricated by Dry Etching and Regrowth," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper CThGG3.
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