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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 6, 2007
ISBN: 1557528349
Poster Session I (JTuA)

Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD

Hongbo Yu, Taeil Jung, L. K. Lee, and P. C. Ku

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Multiple wavelength emission is experimentally observed from semipolar InGaN/GaN quantum wells selectively grown by MOCVD. Selective growth rates on different mask opening areas result in a multiple wavelength emission from the same wafer.

© 2007 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication

H. Yu, T. Jung, L. K. Lee, and P. C. Ku, "Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper JTuA92.

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