We demonstrate a phase modulator based on carrier depletion on the hybrid silicon evanescent platform. The device has a modulation efficiency of 4Vmm, along with a bandwidth of 100nm and power capability up to 20mW.
© 2008 Optical Society of America
H. Chen, Y. Kuo, and J. E. Bowers, "Hybrid Silicon Evanescent Phase Modulator Based on Carrier Depletion in Offset Multiple-Quantum-Well," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CFH3.
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