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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CThKK1

Electronic Characterization of Silicon Doped Beyond the Solubility Limit via Femtosecond Laser Irradiation

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Abstract

We have performed temperature-dependent resistivity measurements of silicon after doping with sulfur via femtosecond laser irradiation. Results are consistent with a theoretically predicted binding energy for sulfur donors of 100 meV below the conduction-band edge.

© 2008 Optical Society of America

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