Abstract
We have performed temperature-dependent resistivity measurements of silicon after doping with sulfur via femtosecond laser irradiation. Results are consistent with a theoretically predicted binding energy for sulfur donors of 100 meV below the conduction-band edge.
© 2008 Optical Society of America
PDF ArticleMore Like This
Zixi Jia, Qiang Wu, Ride Wang, Xiaorong Jin, Song Huang, Jianghong Yao, and Jingjun Xu
ATu4I.3 CLEO: Applications and Technology (CLEO:A&T) 2019
Takahiro Nakamura, Yuzuru Mochidzuki, Kouichi Takasaki, and Shunichi Sato
JWA6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008
T. Anderson, N. Carlie, J. Hu, L. Petit, A. Agarwal, J. Choi, L.C. Kimerling, K. Richardson, and M. Richardson
CTuG6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008