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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CThKK2

High-Speed SiGe p-i-n W-Structure Photodetectors at Telecommunication Wavelengths Grown Directly on Si

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Abstract

We report on Si-rich Si1−xGex p-i-n W-structure single-mode waveguide detectors of varying lengths, and found to have a responsivity of upto 489µAW−1mm−1. The shortest tested devices exhibit a 1.74GHz bandwidth, and 173.5µA/W responsitivty at 1.3µm.

© 2008 Optical Society of America

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