The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal.
© 2008 Optical Society of America
D. Ding, S. R. Johnson, J. Wang, S. Yu, and Y. Zhang, "Measurement of Spontaneous Emission Quantum Efficiency in InGaAs/GaAs Quantum Wells," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CThKK3.
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