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Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
Semiconductor Optoelectronics (CThKK)

Measurement of Spontaneous Emission Quantum Efficiency in InGaAs/GaAs Quantum Wells

Ding Ding, Shane R. Johnson, Jiang-Bo Wang, Shui-Qing Yu, and Yong-Hang Zhang

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Abstract

The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal.

© 2008 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence

Citation
D. Ding, S. R. Johnson, J. Wang, S. Yu, and Y. Zhang, "Measurement of Spontaneous Emission Quantum Efficiency in InGaAs/GaAs Quantum Wells," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CThKK3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2008-CThKK3


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