Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation.
© 2008 Optical Society of America
(220.0220) Optical design and fabrication : Optical design and fabrication
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
(220.4241) Optical design and fabrication : Nanostructure fabrication
H. H. Yen, C. Chiu, P. Yu, C. C. Kao, C. Lin, H. C. Kuo, T. C. Lu, S. C. Wang, and W. Y. Yeh, "Micro-Photoluminescence from a Single InGaN-Based Nano-Pillar Fabricated by Focus Ion Beam Milling," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CTuCC5.
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