The quantum-confined Stark effect demonstrated in Si-Ge/Ge quantum wells promises integration of optics with silicon ICs. Using photocurrent, tunneling resonance and nonparabolicity, we propose more accurate values of key parameters for device design.
© 2008 Optical Society of America
R. K. Schaevitz, J. E. Roth, S. Ren, O. Fidaner, and D. A. Miller, "Material Properties in Si-Ge/Ge Quantum Wells for Silicon-Integrated Electro-Absorption Devices," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CTuR1.
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