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Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
Optical Modulators and Switches (CTuR)

Material Properties in Si-Ge/Ge Quantum Wells for Silicon-Integrated Electro-Absorption Devices

Rebecca K. Schaevitz, Jonathan E. Roth, Shen Ren, Onur Fidaner, and David A. Miller

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Abstract

The quantum-confined Stark effect demonstrated in Si-Ge/Ge quantum wells promises integration of optics with silicon ICs. Using photocurrent, tunneling resonance and nonparabolicity, we propose more accurate values of key parameters for device design.

© 2008 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.2100) Materials : Electro-optical materials
(160.6000) Materials : Semiconductor materials

Citation
R. K. Schaevitz, J. E. Roth, S. Ren, O. Fidaner, and D. A. Miller, "Material Properties in Si-Ge/Ge Quantum Wells for Silicon-Integrated Electro-Absorption Devices," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CTuR1.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2008-CTuR1


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