Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser

Sjoerd Hoogland; Arnaud Garnache; Keith G Wilcox; Zakaria Mihoubi; Stephen Elsmere; Adrian Quarterman; Anne Tropper

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper CWD6

Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser

Sjoerd Hoogland, Arnaud Garnache, Keith G Wilcox, Zakaria Mihoubi, Stephen Elsmere, Adrian Quarterman, and Anne Tropper

Conference on Lasers and Electro-Optics 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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Semiconductor Disk Lasers (CWD)

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S. Hoogland, A. Garnache, K. G. Wilcox, Z. Mihoubi, S. Elsmere, A. Quarterman, and A. Tropper, "Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper CWD6.

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Abstract

Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

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