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Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
Semiconductor Disk Lasers (CWD)

Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser

Anne Tropper, Sjoerd Hoogland, Arnaud Garnache, Keith G. Wilcox, Zakaria Mihoubi, Stephen Elsmere, and Adrian Quarterman

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Abstract

Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

© 2008 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

Citation
A. Tropper, S. Hoogland, A. Garnache, K. G. Wilcox, Z. Mihoubi, S. Elsmere, and A. Quarterman, "Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CWD6.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2008-CWD6


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