We demonstrate germanium photodetectors integrated on submicron silicon waveguides by low-temperature bonding and ion-cut. The devices show very low dark current of ~100 nA, fiber-accessed responsivity of 0.44 A/W, and quantum efficiency of > 90%.
© 2008 Optical Society of America
L. Chen, P. Dong, and M. Lipson, "Highly Efficient, Ultra Low Dark Current Germanium Photodetectors Integrated on Submicron Silicon Waveguides," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CWF3.
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