A simple and effective processing technique for 3D nanoscale pattern formation in light emitting porous silicon is reported. The technique is based on metal assisted chemical etching and defined by the 2D nanoscale metal pattern.
© 2008 Optical Society of America
I. S. Chun, E. K. Chow, and X. Li, "3-D Nanoscale Pattern Formation in Porous Silicon," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CWO3.
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