We demonstrate a novel process for fabrication of GaAs-based single lateral mode buried heterostructure lasers using a single epitaxial overgrowth in which an n-doped InGaP layer is utilized for both electrical and optical confinement.
© 2008 Optical Society of America
K. M. Groom, R. R. Alexander, D. T. Childs, A. B. Krysa, J. S. Roberts, A. S. Helmy, and R. A. Hogg, "GaAs-Based Buried Heterostructure Laser Incorporating an InGaP Opto-Electronic Confinement Layer," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA3.
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