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Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
CLEO/QELS Poster Session III (JThA)

High Enhancement in Light Output of InGaN-Based Micro-Hole Array LEDs by Photoelectrochemical (PEC) Oxidation

Fang-I Lai, S G. Lin, C E. Hsieh, H C. Kuo, T C. Lu, and S C. Wang

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Abstract

InGaN micro-hole-array LEDs (?-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of ?-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.

© 2008 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(310.0310) Thin films : Thin films
(310.6860) Thin films : Thin films, optical properties

Citation
F. Lai, S. G. Lin, C. E. Hsieh, H. C. Kuo, T. C. Lu, and S. C. Wang, "High Enhancement in Light Output of InGaN-Based Micro-Hole Array LEDs by Photoelectrochemical (PEC) Oxidation," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA65.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2008-JThA65


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