InGaN micro-hole-array LEDs (?-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of ?-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
© 2008 Optical Society of America
F. Lai, S. G. Lin, C. E. Hsieh, H. C. Kuo, T. C. Lu, and S. C. Wang, "High Enhancement in Light Output of InGaN-Based Micro-Hole Array LEDs by Photoelectrochemical (PEC) Oxidation," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA65.
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