We integrated into GaN LEDs both two-dimensional photonic crystal patterns and angled sidewall deflectors. The resultant devices exhibited about three-fold enhancement in vertical emission intensity when compared with the planar reference LED device.
© 2008 Optical Society of America
J. Lee, D. Kim, S. Kim, S. Ahn, and H. Jeon, "High Extraction Efficiency GaN Light-Emitting Diode with Photonic Crystal Patterns and Angled Sidewall Deflectors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA73.
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