OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO > 2008 > JThA > Page JThA73 © 2008 OSA

Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
CLEO/QELS Poster Session III (JThA)

High Extraction Efficiency GaN Light-Emitting Diode with Photonic Crystal Patterns and Angled Sidewall Deflectors

Joonhee Lee, Donguk Kim, Sihan Kim, Sungmo Ahn, and Heonsu Jeon

View Full Text Article

Acrobat PDF (242 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

We integrated into GaN LEDs both two-dimensional photonic crystal patterns and angled sidewall deflectors. The resultant devices exhibited about three-fold enhancement in vertical emission intensity when compared with the planar reference LED device.

© 2008 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.5298) Optical devices : Photonic crystals

Citation
J. Lee, D. Kim, S. Kim, S. Ahn, and H. Jeon, "High Extraction Efficiency GaN Light-Emitting Diode with Photonic Crystal Patterns and Angled Sidewall Deflectors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JThA73.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2008-JThA73


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited