OSA's Digital Library

Optics InfoBase > Conference Papers > CLEO > 2008 > JTuA > Page JTuA18 © 2008 OSA

Conference Paper
Conference on Lasers and Electro-Optics
San Jose, California United States
May 4-9, 2008
ISBN: 978-1-55752-859-9
CLEO/QELS Poster Session I (JTuA)

Improved Band Anticrossing Using Many Impurity Anderson Model and Study of N Induced Scattering in the GaInNAs Material System

Nikolaos Vogiatzis and Judy M. Rorison

View Full Text Article

Acrobat PDF (414 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

Using self energy calculations we present an improved band-anti crossing model with regards to the perturbed extended and localized states, based on the many impurity Anderson model. We also derive the perturbed density of states.

© 2008 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(290.0290) Scattering : Scattering
(290.5825) Scattering : Scattering theory

Citation
N. Vogiatzis and J. M. Rorison, "Improved Band Anticrossing Using Many Impurity Anderson Model and Study of N Induced Scattering in the GaInNAs Material System," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JTuA18.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2008-JTuA18


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited