Using self energy calculations we present an improved band-anti crossing model with regards to the perturbed extended and localized states, based on the many impurity Anderson model. We also derive the perturbed density of states.
© 2008 Optical Society of America
N. Vogiatzis and J. M. Rorison, "Improved Band Anticrossing Using Many Impurity Anderson Model and Study of N Induced Scattering in the GaInNAs Material System," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JTuA18.
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