A new approach for direct sub-10nm pattern transfer using spin-coated ZrO<sup>2</sup>is presented. The sample InP compound etching selectivity to ZrO<sup>2</sup>is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.
© 2008 Optical Society of America
(110.0110) Imaging systems : Imaging systems
(220.0220) Optical design and fabrication : Optical design and fabrication
(110.4235) Imaging systems : Nanolithography
(220.4241) Optical design and fabrication : Nanostructure fabrication
B. Liu and S. Ho, "Sub-10nm Nanolithography and Direct Pattern Transfer on III-V Compound Semiconductor Using Sol-Gel Derived ZrO<sup>2</sup> <sup/>," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper JTuA20.
References are not available for this paper.