The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching.
© 2009 The Optical Society
(220.0220) Optical design and fabrication : Optical design and fabrication
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
M. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, T. C. Lu, S. C. Wang, and J. J. Huang, "Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CMH5.
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