The negative polarization charge at the n-InGaN/p-GaN interface of single heterojunction LEDs with p-side down is investigated for various In-compositions. We demonstrate peak emission wavelength blue-shift and intensity dependence on In-composition with increasing current density.
© 2009 The Optical Society
M. L. Reed, H. Shen, M. Wraback, A. Syrkin, and A. Usikov, "Electro-Optical Properties of n-InGaN/p-GaN LED with p-Side Down with Varying Indium Composition," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CMM3.
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