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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Polarization Effects in Nitride LEDs (CMM)

Electro-Optical Properties of n-InGaN/p-GaN LED with p-Side Down with Varying Indium Composition

Meredith L. Reed, H. Shen, Michael Wraback, Alexander Syrkin, and Alexander Usikov

http://dx.doi.org/10.1364/CLEO.2009.CMM3


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Abstract

The negative polarization charge at the n-InGaN/p-GaN interface of single heterojunction LEDs with p-side down is investigated for various In-compositions. We demonstrate peak emission wavelength blue-shift and intensity dependence on In-composition with increasing current density.

© 2009 The Optical Society

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.2090) Optical devices : Electro-optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
M. L. Reed, H. Shen, M. Wraback, A. Syrkin, and A. Usikov, "Electro-Optical Properties of n-InGaN/p-GaN LED with p-Side Down with Varying Indium Composition," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CMM3.
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2009-CMM3


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