We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.
© 2009 The Optical Society
Y. Huo, H. Lin, Y. Rong, M. Makarova, T. I. Kamins, J. Vuckovic, and J. S. Harris, "Direct Band Gap Tensile-Strained Germanium," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CPDB7.
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