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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
CLEO Postdeadline Session II (CPDB)

Direct Band Gap Tensile-Strained Germanium

Yijie Huo, Hai Lin, Yiwen Rong, Maria Makarova, Theodore I. Kamins, Jelena Vuckovic, and James S. Harris


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We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.

© 2009 The Optical Society

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Y. Huo, H. Lin, Y. Rong, M. Makarova, T. I. Kamins, J. Vuckovic, and J. S. Harris, "Direct Band Gap Tensile-Strained Germanium," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CPDB7.

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