We present a method for accessing nanoscale dimensions in semiconductor wafer metrology, using ultrafast optoacoustic ranging. One illustrative example is the measurement of dimensions and profile of nanometer scale deep trenches in silicon-wafer based structures.
© 2009 The Optical Society
(120.0120) Instrumentation, measurement, and metrology : Instrumentation, measurement, and metrology
(120.3940) Instrumentation, measurement, and metrology : Metrology
(120.6650) Instrumentation, measurement, and metrology : Surface measurements, figure
T. J. Grimsley, F. Yan, C. H. Dang, S. Che, A. Antonelli, H. J. Maris, Q. Zhang, and A. V. Nurmikko, "Nanometer Metrology Using Ultrafast Optoacoustics," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CTuAA6.
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