We achieved a two-orders-of-magnitude improvement of free carrier lifetimes in sub-micron silicon-on-insulator waveguides by applying a stoichiometric Si<sup>3</sup>N<sup>4</sup>coating. Such surface passivation is critical for low-power operation of carrier-injected optical switches.
© 2009 The Optical Society
(200.0200) Optics in computing : Optics in computing
(200.4650) Optics in computing : Optical interconnects
(250.0250) Optoelectronics : Optoelectronics
(250.6715) Optoelectronics : Switching
J. Van Campenhout, W. M. Green, S. Assefa, Y. A. Vlasov, X. Liu, and R. M. Osgood, Jr., "Silicon-Nitride Surface Passivation of Sub-Micron Silicon Waveguides for Low-Power Optical Switches," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CTuBB2.
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