Room-temperature photoluminescence measurements are performed on GaInN/GaN multiple quantum wells grown on GaN-on-sapphire templates with different threading-dislocation densities. The internal quantum efficiencies as a function of carrier concentration and the non-radiative coefficients are obtained.
© 2009 The Optical Society
(230.0230) Optical devices : Optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.0250) Optoelectronics : Optoelectronics
(250.5230) Optoelectronics : Photoluminescence
Q. Dai, M. F. Schubert, M. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, "Internal Quantum Efficiency and Non-Radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CTuF3.
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