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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuGG6
  • https://doi.org/10.1364/CLEO.2009.CTuGG6

InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers

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Abstract

InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ~2.5μm @77K.

© 2009 Optical Society of America

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