InAs QWs grown with InAs<sup>y</sup>P<sup>1-y</sup>metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ~2.5μm @77K.
© 2009 The Optical Society
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(250.0250) Optoelectronics : Optoelectronics
(250.5960) Optoelectronics : Semiconductor lasers
J. Kirch, T. Garrod, S. Kim, J. Park, J. Shin, L. Mawst, T. Kuech, X. Song, S. Babcock, I. Vurgaftman, and J. Meyer, "InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CTuGG6.
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