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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuV2
  • https://doi.org/10.1364/CLEO.2009.CTuV2

Monolithic Integration of Germanium Photodetectors and Silicon Wire Waveguides with Carrier Injection Structures

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Abstract

We integrated monolithically vertical p-i-n Ge photodetectors with variable optical attenuators (VOAs) based on Si wire rib waveguides with a carrier injection structure. The fabricated Ge photodetectors have a low dark current of 60 nA and a high responsivity of 0.85 A/W at −1V and accurately detect the change in light power due to the Si-VOA.

© 2009 Optical Society of America

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