Abstract
We integrated monolithically vertical p-i-n Ge photodetectors with variable optical attenuators (VOAs) based on Si wire rib waveguides with a carrier injection structure. The fabricated Ge photodetectors have a low dark current of 60 nA and a high responsivity of 0.85 A/W at −1V and accurately detect the change in light power due to the Si-VOA.
© 2009 Optical Society of America
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