P-n junction GaAs nanoneedle photodetectors are monolithically grown on a (111) Si substrate by MOCVD with CMOS compatibility. A linear response of the photocurrent to the irradiance can be obtained under room temperature operation.
© 2009 The Optical Society
L. C. Chuang, C. Chase, M. Moewe, K. W. Ng, S. Crankshaw, and C. Chang-Hasnain, "GaAs Nanoneedle Photodetector Monolithically Grown on a (111) Si Substrate by MOCVD," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CTuV4.
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