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Conference Paper
Conference on Lasers and Electro-Optics
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Photodetectors and Modulators (CTuV)

GaAs Nanoneedle Photodetector Monolithically Grown on a (111) Si Substrate by MOCVD

Linus C. Chuang, Chris Chase, Michael Moewe, Kar Wei Ng, Shanna Crankshaw, and Connie Chang-Hasnain


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P-n junction GaAs nanoneedle photodetectors are monolithically grown on a (111) Si substrate by MOCVD with CMOS compatibility. A linear response of the photocurrent to the irradiance can be obtained under room temperature operation.

© 2009 The Optical Society

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(250.0250) Optoelectronics : Optoelectronics
(250.0040) Optoelectronics : Detectors

L. C. Chuang, C. Chase, M. Moewe, K. W. Ng, S. Crankshaw, and C. Chang-Hasnain, "GaAs Nanoneedle Photodetector Monolithically Grown on a (111) Si Substrate by MOCVD," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CTuV4.

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