We report on a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55±3 nm. The microscope uses a table-top EUV laser to acquire images of photolithography masks in 20 seconds.
© 2009 The Optical Society
(110.0110) Imaging systems : Imaging systems
(110.7440) Imaging systems : X-ray imaging
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.7240) Lasers and laser optics : UV, EUV, and X-ray lasers
F. Brizuela, Y. Wang, C. A. Brewer, F. Pedaci, W. Chao, E. H. Anderson, Y. Liu, K. A. Goldberg, P. Naulleau, P. Wachulak, M. C. Marconi, D. T. Attwood, J. J. Rocca, and C. S. Menoni, "13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JFA5.